STU12N60M2

Active

STMicroelectronics

MOSFET N-CH 600V 9A IPAK

Search across all available documentation for this part.

Active

STMicroelectronics

MOSFET N-CH 600V 9A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STU12N60M2

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds	538 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	85 W
Rds On (Max) @ Id, Vgs	450 mOhm
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

MOSFET N-CH 600V 9A IPAK

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	FET Type
STMicroelectronics STU12N60M2	600 V	9 A	TO-251 (IPAK)	IPAK, TO-251-3 Short Leads, TO-251AA	450 mOhm	MOSFET (Metal Oxide)	10 V	538 pF	Through Hole	25 V	4 V	16 nC	-55 °C	150 °C	85 W	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	3000	$ 0.73

General part information

N-Channel 600 V 9A (Tc) 85W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources

No documents available