BUK9Y113-100E,115

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Nexperia USA Inc.

N-CHANNEL 100 V, 113 MΩ LOGIC LEVEL MOSFET IN LFPAK56

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BUK9Y113-100E,115

Active

Nexperia USA Inc.

N-CHANNEL 100 V, 113 MΩ LOGIC LEVEL MOSFET IN LFPAK56

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Description Specifications Series Pricing CAD Documents

Description

General part information

BUK9Y113-100E Series

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9Y113-100E,115

Current - Continuous Drain (Id) (Tc)	12 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Max)	8.4 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	870 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	45 W
Qualification	AEC-Q101
Rds On (Max)	110 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max)	2.1 V

BUK9Y113-100E Series

Part	Drain to Source Voltage (Vdss)	Package / Case	Technology	Rds On (Max)	Grade	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package Name	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Qualification	Vgs (Max)	Mounting Type	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)
Nexperia USA Inc. BUK9Y113-100E,115	100 V	SC-100 SOT-669	MOSFET (Metal Oxide)	110 mOhm	Automotive	N-Channel	5 V	LFPAK56 Power-SO8	8.4 nC	-55 °C	175 °C	AEC-Q101	10 V	Surface Mount	2.1 V	12 A	45 W	870 pF