2SK1526-E

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Renesas Electronics Corporation

SILICON N CHANNEL MOSFET

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Renesas Electronics Corporation

SILICON N CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	2SK1526-E

Current - Continuous Drain (Id) @ 25°C	40 A
Drain to Source Voltage (Vdss)	450 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5800 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	TO-3PL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3 V

Silicon N Channel MOSFET

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
Renesas Electronics Corporation 2SK1526-E	TO-3PL	450 V	MOSFET (Metal Oxide)	150 °C	40 A	N-Channel	10 V	Through Hole	5800 pF	SC-65-3, TO-3P-3	30 V	150 mOhm	3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	11	$ 29.69

General part information

The 2SK1526 is a Silicon N Channel MOSFET.

Technical documentation and resources