STU3LN80K5

Active

STMicroelectronics

N-CHANNEL 800 V, 2.75 OHM TYP., 2 A MDMESH K5 POWER MOSFET IN AN IPAK PACKAGE

Find alt

Alpha

STU3LN80K5

Active

STMicroelectronics

N-CHANNEL 800 V, 2.75 OHM TYP., 2 A MDMESH K5 POWER MOSFET IN AN IPAK PACKAGE

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

STU3LN80K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Technical Specifications

Parameters and characteristics for this part

Specification	STU3LN80K5

Current - Continuous Drain (Id) (Tc)	2 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	2.63 nC
Input Capacitance (Ciss) (Max)	102 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Package Name	IPAK (TO-251)
Power Dissipation (Max)	45 W
Rds On (Max)	3.25 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

STU3LN80K5 Series

N-channel 800 V, 2.75 Ohm typ., 2 A MDmesh K5 Power MOSFET in an IPAK package

Part	Input Capacitance (Ciss) (Max)	Vgs (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	FET Type	Mounting Type	Technology	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Power Dissipation (Max)	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case
STMicroelectronics STU3LN80K5	102 pF	30 V	IPAK (TO-251)	2 A	N-Channel	Through Hole	MOSFET (Metal Oxide)	2.63 nC	800 V	5 V	45 W	3.25 Ohm	10 V	-55 °C	150 °C	IPAK TO-251-3 Short Leads TO-251AA