AUIRF1404ZS

Obsolete

Infineon Technologies

MOSFET N-CH 40V 160A D2PAK

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Obsolete

Infineon Technologies

MOSFET N-CH 40V 160A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRF1404ZS

Current - Continuous Drain (Id) @ 25°C	160 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC
Input Capacitance (Ciss) (Max) @ Vds	4340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	3.7 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Package / Case
Infineon Technologies AUIRF1404	N-Channel	4 V	20 V	MOSFET (Metal Oxide)	40 V	-55 °C	175 ░C	Through Hole	160 A	333 W	196 nC	5669 pF	4 mOhm	TO-220AB	10 V	TO-220-3
Infineon Technologies AUIRF1404ZS	N-Channel	4 V	20 V	MOSFET (Metal Oxide)	40 V	-55 °C	175 ░C	Surface Mount	160 A	200 W	150 nC	4340 pF	3.7 mOhm	D2PAK	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Infineon Technologies AUIRF1404ZS	N-Channel	4 V	20 V	MOSFET (Metal Oxide)	40 V	-55 °C	175 ░C	Surface Mount	160 A	200 W	150 nC	4340 pF	3.7 mOhm	D2PAK	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Infineon Technologies AUIRF1404	N-Channel	4 V	20 V	MOSFET (Metal Oxide)	40 V	-55 °C	175 ░C	Through Hole	160 A	333 W	196 nC	5669 pF	4 mOhm	TO-220AB	10 V	TO-220-3

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General part information

N-Channel 40 V 160A (Tc) 200W (Tc) Surface Mount D2PAK

Technical documentation and resources