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2N3735L

2N3735L

Active
Microchip Technology

SMALL-SIGNAL BJT TO-5 ROHS COMPLIANT: YES

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2N3735L

2N3735L

Active
Microchip Technology

SMALL-SIGNAL BJT TO-5 ROHS COMPLIANT: YES

Find alt

Description

General part information

2N3735 Series

This specification covers the performance requirements for NPN, silicon, switching 2N3735 and 2N3737 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/395. Two levels of product assurance are provided for each unencapsulated device type (JANHC and JANKC). RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package outlines are as follows:(TO-39 and TO-5), (TO-46) and (2N3737UB). The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/395.

Technical Specifications

Parameters and characteristics for this part

Specification2N3735L
Current - Collector (Ic) (Max)1.5 A
Current - Collector Cutoff (Max)10 µA
DC Current Gain (hFE) (Min)20
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-5-3 Metal Can, TO-205AA
Package NameTO-5
Power - Max1 VA
Transistor TypeNPN
Vce Saturation (Max)900 mV
Voltage - Collector Emitter Breakdown (Max)40 V

Pricing

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CAD

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Documents

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