STW21N90K5

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STMicroelectronics

N-CHANNEL 900 V, 0.25 OHM TYP., 18.5 A MDMESH K5 POWER MOSFET IN TO-247 PACKAGE

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STW21N90K5

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STMicroelectronics

N-CHANNEL 900 V, 0.25 OHM TYP., 18.5 A MDMESH K5 POWER MOSFET IN TO-247 PACKAGE

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Description Specifications Series Pricing CAD Documents

Description

General part information

STW21 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Technical Specifications

Parameters and characteristics for this part

Specification	STW21N90K5

Current - Continuous Drain (Id) (Tc)	18.5 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	43 nC
Input Capacitance (Ciss) (Max)	1645 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247-3
Power Dissipation (Max)	250 W
Rds On (Max)	299 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

STW21 Series

N-channel 1500 V, 0.7 Ohm typ., 14 A MDmesh K5 Power MOSFET in a TO-247 packge

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Rds On (Max)	Package Name	Technology	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Gate Charge (Max)
STMicroelectronics STW21N150K5	TO-247-3	10 V	14 A	3145 pF	5 V	900 mOhm	TO-247-3	MOSFET (Metal Oxide)	Through Hole	30 V	1500 V	446 W	-55 °C	150 °C	N-Channel	89 nC
STMicroelectronics STW21N90K5	TO-247-3	10 V	18.5 A	1645 pF	5 V	299 mOhm	TO-247-3	MOSFET (Metal Oxide)	Through Hole	30 V	900 V	250 W	-55 °C	150 °C	N-Channel	43 nC