AOT474

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 75V 9A/127A TO220

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Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 75V 9A/127A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT474

Current - Continuous Drain (Id) @ 25°C	127 A, 9 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	3370 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	1.9 W
Power Dissipation (Max)	417 W
Rds On (Max) @ Id, Vgs	11.3 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Technology	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
Alpha & Omega Semiconductor Inc. AOT474	Through Hole	60 nC	9 A 127 A	1.9 W	417 W	3370 pF	N-Channel	10 V	11.3 mOhm	4 V	-55 °C	175 ░C	20 V	TO-220	75 V	TO-220-3	MOSFET (Metal Oxide)
Alpha & Omega Semiconductor Inc. AOT472	Through Hole		10 A 140 A	1.9 W	417 W		N-Channel	10 V		3.9 V	-55 °C	175 ░C	20 V	TO-220	75 V	TO-220-3	MOSFET (Metal Oxide)	8.9 mOhm	4500 pF	115 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 75 V 9A (Ta), 127A (Tc) 1.9W (Ta), 417W (Tc) Through Hole TO-220

Technical documentation and resources