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STFH24N60M2

STFH24N60M2

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STMicroelectronics

N-CHANNEL 600 V, 0.168 OHM TYP., 18 A MDMESH M2 POWER MOSFET IN TO-220FP WIDE CREEPAGE PACKAGE

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STFH24N60M2

STFH24N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.168 OHM TYP., 18 A MDMESH M2 POWER MOSFET IN TO-220FP WIDE CREEPAGE PACKAGE

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Description

General part information

STFH24N60M2 Series

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTFH24N60M2
Current - Continuous Drain (Id) (Tc)18 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)29 nC
Input Capacitance (Ciss) (Max)1060 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220FP
Power Dissipation (Max)35 W
Rds On (Max)190 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)4 V

Pricing

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CAD

3D models and CAD resources for this part