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BSZ0911LSATMA1 - INFINEON BSZ0911LSATMA1

BSZ0911LSATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 7 MOHM;

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BSZ0911LSATMA1 - INFINEON BSZ0911LSATMA1

BSZ0911LSATMA1

Active
Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 7 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSZ0911LSATMA1
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]10 nC
Input Capacitance (Ciss) (Max) @ Vds670 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Rds On (Max) @ Id, Vgs7 mOhm
Supplier Device PackagePG-TDSON-8 FL
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.63
10$ 0.39
100$ 0.25
500$ 0.20
1000$ 0.18
2000$ 0.17
Digi-Reel® 1$ 0.63
10$ 0.39
100$ 0.25
500$ 0.20
1000$ 0.18
2000$ 0.17
Tape & Reel (TR) 5000$ 0.17
NewarkEach (Supplied on Cut Tape) 1$ 0.82
10$ 0.52
25$ 0.46
50$ 0.40
100$ 0.34
250$ 0.30
500$ 0.26
1000$ 0.22

Description

General part information

BSZ0911 Series

Infineon’sOptiMOS™ PD power MOSFETportfolio is targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages. Click here to viewfull portfolio.

Documents

Technical documentation and resources