PMPB16EPX

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Nexperia USA Inc.

TRANSISTOR MOSFET P-CH 30V 10.6A 6-PIN DFN2020MD T/R

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PMPB16EPX

Active

Nexperia USA Inc.

TRANSISTOR MOSFET P-CH 30V 10.6A 6-PIN DFN2020MD T/R

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMPB16EP Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB16EPX

Current - Continuous Drain (Id) (Ta)	7.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	44 nC, 44 nC
Input Capacitance (Ciss) (Max)	1418 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UDFN Exposed Pad
Package Name	DFN2020MD-6
Power Dissipation (Max)	2 W, 12.5 W
Rds On (Max)	20 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	2.5 V

PMPB16EP Series

Part	Gate Charge (Max)	FET Type	Rds On (Max)	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Package Name	Vgs (Max)	Input Capacitance (Ciss) (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package / Case
Nexperia USA Inc. PMPB16EPX	44 nC 44 nC	P-Channel	20 mOhm	2 W 12.5 W	Surface Mount	2.5 V	7.5 A	30 V	DFN2020MD-6	25 V	1418 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	4.5 V	6-UDFN Exposed Pad