IPW60R040C7XKSA1

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Infineon Technologies

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 40 MOHM; HIGHEST PERFORMANCE

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IPW60R040C7XKSA1

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Infineon Technologies

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 40 MOHM; HIGHEST PERFORMANCE

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Technical Specifications

Parameters and characteristics for this part

Specification	IPW60R040C7XKSA1

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	107 nC
Input Capacitance (Ciss) (Max) @ Vds	4340 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	227 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	PG-TO247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPW60R040 Series

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPW60R040CFD7XKSA1	4.5 V	-55 °C	150 °C	N-Channel	20 V	MOSFET (Metal Oxide)	600 V	109 nC	Through Hole	TO-247-3	227 W	50 A	10 V	40 mOhm	PG-TO247-3	4354 pF
Infineon Technologies IPW60R040C7XKSA1	4 V	-55 °C	150 °C	N-Channel	20 V	MOSFET (Metal Oxide)	600 V		Through Hole	TO-247-3	227 W	50 A	10 V	40 mOhm	PG-TO247-3	4340 pF	107 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 10.88
		10	$ 8.09
		30	$ 6.11
		100	$ 6.08
		120	$ 5.56
		500	$ 5.79
		510	$ 5.24

Description

General part information

IPW60R040 Series

The600V CoolMOS™C7 superjunction (SJ) MOSFETseries offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.

Documents

Technical documentation and resources