IXTH60N15

Obsolete

IXYS

MOSFET N-CH 150V 60A TO247

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Obsolete

IXYS

MOSFET N-CH 150V 60A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH60N15

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	275 W
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs (Max)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs
IXYS IXTH60N25	46 mOhm	-55 °C	150 °C	250 V	10 V	N-Channel	164 nC	TO-247 (IXTH)	20 V	400 W	60 A	MOSFET (Metal Oxide)	TO-247-3	4400 pF	4 V	Through Hole
IXYS IXTH60N15		-55 °C	150 °C	150 V	10 V	N-Channel	110 nC	TO-247 (IXTH)	20 V		60 A	MOSFET (Metal Oxide)	TO-247-3		4 V	Through Hole	275 W	33 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 60A (Tc) 275W (Tc) Through Hole TO-247 (IXTH)

Technical documentation and resources

No documents available