SGB30N60ATMA1

Obsolete

Infineon Technologies

IGBT 600V 41A 250W TO263-3

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Obsolete

Infineon Technologies

IGBT 600V 41A 250W TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	SGB30N60ATMA1

Current - Collector (Ic) (Max) [Max]	41 A
Current - Collector Pulsed (Icm)	112 A
Gate Charge	140 nC
IGBT Type	NPT
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]	250 W
Supplier Device Package	PG-TO263-3-2
Switching Energy	1.29 mJ
Td (on/off) @ 25°C	44 ns, 291 ns
Test Condition	30 A, 15 V, 400 V, 11 Ohm
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Current - Collector (Ic) (Max) [Max]	Test Condition	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power - Max [Max]	Mounting Type	Td (on/off) @ 25°C	IGBT Type	Vce(on) (Max) @ Vge, Ic	Switching Energy	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max) [Max]	Gate Charge	Package / Case
Infineon Technologies SGB30N60ATMA1	41 A	11 Ohm 15 V 30 A 400 V	-55 °C	150 °C	PG-TO263-3-2	250 W	Surface Mount	44 ns 291 ns	NPT	2.4 V	1.29 mJ	112 A	600 V	140 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT NPT 600 V 41 A 250 W Surface Mount PG-TO263-3-2

Technical documentation and resources