AOTF20S60L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 20A TO220-3F

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 20A TO220-3F

Technical Specifications

Parameters and characteristics for this part

Specification	AOTF20S60L

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19.8 nC
Input Capacitance (Ciss) (Max) @ Vds	1038 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	37.8 W
Rds On (Max) @ Id, Vgs	199 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.1 V

Part	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
Alpha & Omega Semiconductor Inc. AOTF20S60L	MOSFET (Metal Oxide)	TO-220F	19.8 nC	Through Hole	4.1 V	37.8 W	199 mOhm	N-Channel	10 V	1038 pF	20 A	30 V	-55 °C	150 °C	600 V	TO-220-3 Full Pack
Alpha & Omega Semiconductor Inc. AOTF20N40L	MOSFET (Metal Oxide)	TO-220F		Through Hole	4.3 V	40 W		N-Channel	10 V	2290 pF	20 A	30 V	-55 °C	150 °C	400 V	TO-220-3 Full Pack	45 nC	250 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly