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IPI120N08S403AKSA1 - Infineon Technologies AG-IPI50R399CPXKSA2 MOSFETs Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-262 Tube

IPI120N08S403AKSA1

Obsolete
Infineon Technologies

TRANS MOSFET N-CH 80V 120A AUTOMOTIVE AEC-Q101 3-PIN(3+TAB) TO-262 TUBE

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IPI120N08S403AKSA1 - Infineon Technologies AG-IPI50R399CPXKSA2 MOSFETs Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-262 Tube

IPI120N08S403AKSA1

Obsolete
Infineon Technologies

TRANS MOSFET N-CH 80V 120A AUTOMOTIVE AEC-Q101 3-PIN(3+TAB) TO-262 TUBE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPI120N08S403AKSA1
Current - Continuous Drain (Id) @ 25°C120 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs167 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds11550 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)278 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]2.8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

IPI120 Series

N-Channel 80 V 120A (Tc) 278W (Tc) Through Hole PG-TO262-3-1

Documents

Technical documentation and resources

No documents available