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STS10DN3LH5 - 8-SOIC

STS10DN3LH5

NRND
STMicroelectronics

DUAL N-CHANNEL 30 V, 0.019 OHM;, 10 A, SO-8 STRIPFET (TM); V POWER MOSFET

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Search across all available documentation for this part.

DocumentsProduct Change Notice ENTechnical Data Sheet EN+12
STS10DN3LH5 - 8-SOIC

STS10DN3LH5

NRND
STMicroelectronics

DUAL N-CHANNEL 30 V, 0.019 OHM;, 10 A, SO-8 STRIPFET (TM); V POWER MOSFET

Deep-Dive with AI

DocumentsProduct Change Notice ENTechnical Data Sheet EN+12

Technical Specifications

Parameters and characteristics for this part

SpecificationSTS10DN3LH5
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs4.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]475 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power - Max [Max]2.5 W
Rds On (Max) @ Id, Vgs21 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.32
10$ 1.08
100$ 0.84
500$ 0.71
1000$ 0.58
Digi-Reel® 1$ 1.32
10$ 1.08
100$ 0.84
500$ 0.71
1000$ 0.58
Tape & Reel (TR) 2500$ 0.54
5000$ 0.50
7500$ 0.50
NewarkEach 1$ 0.59
10$ 0.59
100$ 0.59
500$ 0.59
1000$ 0.59
2500$ 0.52
10000$ 0.50

Description

General part information

STS10DN3LH5 Series

This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.