IXTV110N25TS

Obsolete

IXYS

MOSFET N-CH 250V 110A PLUS220SMD

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 250V 110A PLUS220SMD

Technical Specifications

Parameters and characteristics for this part

Specification	IXTV110N25TS

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	157 nC
Input Capacitance (Ciss) (Max) @ Vds	9400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PLUS-220SMD
Power Dissipation (Max) [Max]	694 W
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	PLUS-220SMD
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]
IXYS IXTV110N25TS	10 V	20 V	9400 pF	110 A	-55 °C	150 °C	24 mOhm	MOSFET (Metal Oxide)	PLUS-220SMD	N-Channel	250 V	PLUS-220SMD	Surface Mount	4.5 V	157 nC	694 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 250 V 110A (Tc) 694W (Tc) Surface Mount PLUS-220SMD

Technical documentation and resources