IAUC70N08S5N074ATMA1

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Infineon Technologies

INFINEON’S IAUC70N08S5N074 N-CHANNEL MOSFET, AEC Q101, ROHS, 175°C, 100% AVALANCHE TESTED. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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Infineon Technologies

INFINEON’S IAUC70N08S5N074 N-CHANNEL MOSFET, AEC Q101, ROHS, 175°C, 100% AVALANCHE TESTED. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

Technical Specifications

Parameters and characteristics for this part

Specification	IAUC70N08S5N074ATMA1

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2080 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	83 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	7.4 mOhm
Supplier Device Package	PG-TDSON-8-33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Grade	FET Type	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Qualification	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IAUC70N08S5N074ATMA1	80 V	7.4 mOhm	8-PowerTDFN	MOSFET (Metal Oxide)	2080 pF	Automotive	N-Channel	83 W	Surface Mount	20 V	30 nC	70 A	AEC-Q101	PG-TDSON-8-33	3.8 V	6 V 10 V	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 70A (Tc) 83W (Tc) Surface Mount PG-TDSON-8-33

Technical documentation and resources