DMT6012LSS-13

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Diodes Inc

MOSFET, N-CH, 60V, 10.4A, SOIC ROHS COMPLIANT: YES

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Active

Diodes Inc

MOSFET, N-CH, 60V, 10.4A, SOIC ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	DMT6012LSS-13

Current - Continuous Drain (Id) @ 25°C	10.4 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22.2 nC
Input Capacitance (Ciss) (Max) @ Vds	1522 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.2 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

60V N-Channel Enhancement Mode MOSFET

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMT6012LSS-13	N-Channel	4.5 V 10 V	20 V	Surface Mount	-55 °C	150 °C	1.2 W	8-SOIC	3.9 mm	0.154 in	11 mOhm	2 V	MOSFET (Metal Oxide)	1522 pF	22.2 nC	10.4 A	60 V	8-SO
Diodes Inc DMT6012LFDF-7	N-Channel	4.5 V 10 V	20 V	Surface Mount	-55 °C	150 °C	11 W 900 mW	6-UDFN Exposed Pad			14 mOhm	2.3 V	MOSFET (Metal Oxide)			9.5 A	60 V	U-DFN2020-6 (Type F)	785 pF	13.6 nC

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General part information

60V N-Channel Enhancement Mode MOSFET

Technical documentation and resources