R6014YND3TL1
ActiveRohm Semiconductor
MOSFET, N-CH, 600V, 14A, TO-252 ROHS COMPLIANT: YES
R6014YND3TL1
ActiveRohm Semiconductor
MOSFET, N-CH, 600V, 14A, TO-252 ROHS COMPLIANT: YES
Description
General part information
R6014YND3 Series
R6014YND3 is a power MOSFET with low on - resistance, suitable for switching.
Technical Specifications
Parameters and characteristics for this part
| Specification | R6014YND3TL1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 14 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On) | 10 V |
| Drive Voltage (Min Rds On) | 12 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 20 nC |
| Input Capacitance (Ciss) (Max) | 890 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252 |
| Power Dissipation (Max) | 132 W |
| Rds On (Max) | 260 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 6 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Technical Data Sheet EN
Two-Resistor Model for Thermal Simulation
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Report of SVHC under REACH Regulation
Notes for Temperature Measurement Using Thermocouples
Precautions When Measuring the Rear of the Package with a Thermocouple
PCB Layout Thermal Design Guide
Judgment Criteria of Thermal Evaluation
Method for Monitoring Switching Waveform
Basics of Thermal Resistance and Heat Dissipation
MOSFET Gate Drive Current Setting for Motor Driving
MOSFET Gate Resistor Setting for Motor Driving
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
Anti-Whisker formation - Transistors
What Is Thermal Design
About Export Regulations
θ<sub>JC</sub> and Ψ<sub>JT</sub>
How to Use LTspice® Models
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Notes for Calculating Power Consumption:Static Operation
Impedance Characteristics of Bypass Capacitor
Temperature derating method for Safe Operating Area (SOA)
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Explanation for Marking
Measurement Method and Usage of Thermal Resistance RthJC
Importance of Probe Calibration When Measuring Power: Deskew
Condition of Soldering / Land Pattern Reference
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
List of Transistor Package Thermal Resistance
Types and Features of Transistors
Compliance of the RoHS directive
Part Explanation
TO-252_TL1 Taping Information
About Flammability of Materials
How to Use LTspice® Models: Tips for Improving Convergence
What is a Thermal Model? (Transistor)
Calculation of Power Dissipation in Switching Circuit
R6014YND3 ESD Data
Moisture Sensitivity Level - Transistors
Package Dimensions
How to Use the Thermal Resistance and Thermal Characteristics Parameters