IPB081N06L3GATMA1

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Infineon Technologies

POWER MOSFET, N CHANNEL, 60 V, 50 A, 0.0067 OHM, TO-263 (D2PAK), SURFACE MOUNT

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IPB081N06L3GATMA1

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Infineon Technologies

POWER MOSFET, N CHANNEL, 60 V, 50 A, 0.0067 OHM, TO-263 (D2PAK), SURFACE MOUNT

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB081N06L3GATMA1

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds	4900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	79 W
Rds On (Max) @ Id, Vgs	8.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

IPB081 Series

Part	Gate Charge (Qg) (Max) @ Vgs	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies IPB081N06L3GATMA1	29 nC	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.5 V 10 V	60 V	79 W	MOSFET (Metal Oxide)	-55 °C	175 ░C	Surface Mount	2.2 V	20 V	4900 pF	8.1 mOhm	50 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.19
		10	$ 1.41
		100	$ 0.96
		500	$ 0.76
	Digi-Reel®	1	$ 2.19
		10	$ 1.41
		100	$ 0.96
		500	$ 0.76
	Tape & Reel (TR)	1000	$ 0.70
		2000	$ 0.65
		3000	$ 0.62
		5000	$ 0.62
Newark	Each	1	$ 1.68
		10	$ 1.28
		100	$ 0.99
		500	$ 0.84
		1000	$ 0.68
		3000	$ 0.64
		10000	$ 0.62

Description

General part information

IPB081 Series

The IPB081N06L3 G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.

Documents

Technical documentation and resources