RGE80TS65DGC13
ObsoleteRohm Semiconductor
5ΜS SHORT-CIRCUIT TOLERANCE, 650V 40A, FRD BUILT-IN, TO-247GE, FIELD STOP TRENCH IGBT
RGE80TS65DGC13
ObsoleteRohm Semiconductor
5ΜS SHORT-CIRCUIT TOLERANCE, 650V 40A, FRD BUILT-IN, TO-247GE, FIELD STOP TRENCH IGBT
Description
General part information
RGE80TS65DG Series
RGE80TS65DG is IGBT featuring low switching loss and low conduction loss. It is ideal for Power Conditioner and Welder and General Inverter and UPS
Technical Specifications
Parameters and characteristics for this part
| Specification | RGE80TS65DGC13 |
|---|---|
| Current - Collector (Ic) (Max) | 63 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 85 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247GE |
| Power - Max | 200 W |
| Reverse Recovery Time (trr) | 183 ns |
| Switching Energy (Off) | 780 µJ |
| Switching Energy (On) | 1.09 mJ |
| Td (off) @ 25°C | 131 ns |
| Td (on) @ 25°C | 49 ns |
| Test Condition Current | 40 A |
| Test Condition Resistance | 10 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2.05 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Judgment Criteria of Thermal Evaluation
Notes for Temperature Measurement Using Thermocouples
Precautions for Thermal Resistance of Insulation Sheet
Anti-Whisker formation
What is a Thermal Model? (IGBT)
About Flammability of Materials
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Method for Monitoring Switching Waveform
The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level
Two-Resistor Model for Thermal Simulation
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
Importance of Probe Calibration When Measuring Power: Deskew
RGE80TS65DG Data Sheet
Part Explanation
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Impedance Characteristics of Bypass Capacitor
Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules
Compliance of the ELV directive
Notes for Calculating Power Consumption:Static Operation
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Moisture Sensitivity Level
What Is Thermal Design
Notes for Temperature Measurement Using Forward Voltage of PN Junction
How to Use LTspice® Models: Tips for Improving Convergence
Estimation of switching losses in IGBTs operating with resistive load
Package Dimensions - TO-247GE
PCB Layout Thermal Design Guide
About Export Administration Regulations (EAR)
Calculation of Power Dissipation in Switching Circuit
Types and Features of Transistors
Generation Mechanism of Voltage Surge on Commutation Side (Basic)
Precautions When Measuring the Rear of the Package with a Thermocouple
4 Steps for Successful Thermal Designing of Power Devices
Basics of Thermal Resistance and Heat Dissipation
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
Measurement Method and Usage of Thermal Resistance RthJC
How to Use LTspice® Models