IPA60R460CEXKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 600V 9.1A TO220-FP

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Obsolete

Infineon Technologies

MOSFET N-CH 600V 9.1A TO220-FP

Technical Specifications

Parameters and characteristics for this part

Specification	IPA60R460CEXKSA1

Current - Continuous Drain (Id) @ 25°C	9.1 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	620 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs	460 mOhm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Rds On (Max) @ Id, Vgs	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case
Infineon Technologies IPA60R460CEXKSA1	460 mOhm	MOSFET (Metal Oxide)	20 V	600 V	10 V	150 °C	-40 °C	N-Channel	620 pF	Through Hole	28 nC	3.5 V	PG-TO220-FP	9.1 A	TO-220-3 Full Pack

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 9.1A (Tc) 30W (Tc) Through Hole PG-TO220-FP

Technical documentation and resources