BSC160N15NS5ATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 150 V ; SUPERSO8 5X6 PACKAGE; 16 MOHM;

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BSC160N15NS5ATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 150 V ; SUPERSO8 5X6 PACKAGE; 16 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSC160N15NS5ATMA1

Current - Continuous Drain (Id) @ 25°C	56 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	8 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23.1 nC
Input Capacitance (Ciss) (Max) @ Vds	1820 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	96 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	PG-TDSON-8-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4.6 V

BSC160 Series

Part	Technology	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]	Supplier Device Package	Package / Case	Vgs (Max)	FET Type
Infineon Technologies BSC160N15NS5ATMA1	MOSFET (Metal Oxide)	23.1 nC	-55 °C	150 °C	56 A	1820 pF	96 W	8 V 10 V	Surface Mount	16 mOhm	150 V	4.6 V	PG-TDSON-8-7	8-PowerTDFN	20 V	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.13
		10	$ 2.04
		100	$ 1.41
		500	$ 1.15
		1000	$ 1.06
		2000	$ 1.00
	Digi-Reel®	1	$ 3.13
		10	$ 2.04
		100	$ 1.41
		500	$ 1.15
		1000	$ 1.06
		2000	$ 1.00
	Tape & Reel (TR)	5000	$ 1.00
Newark	Each (Supplied on Full Reel)	5000	$ 1.04

Description

General part information

BSC160 Series

The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in RDS(on)(up to 25 percent compared to the next best alternative in SuperSO8) and Qrrwithout compromising FOMgdand FOMOSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Qrr= 26 nC in SuperSO8) increases commutation ruggedness.

Documents

Technical documentation and resources