IPD30N10S3L34ATMA1

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Infineon Technologies

IPD30N10S3L-34 IS AN AUTOMOTIVE MOSFET OFFERING 100V, N-CH, 31 MΩ MAX, DPAK, OPTIMOS™-T, AEC Q101 QUALIFIED, 175°C OPERATING TEMP, ROHS COMPLIANT.

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Active

Infineon Technologies

IPD30N10S3L-34 IS AN AUTOMOTIVE MOSFET OFFERING 100V, N-CH, 31 MΩ MAX, DPAK, OPTIMOS™-T, AEC Q101 QUALIFIED, 175°C OPERATING TEMP, ROHS COMPLIANT.

Technical Specifications

Parameters and characteristics for this part

Specification	IPD30N10S3L34ATMA1

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds	1976 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	57 W
Rds On (Max) @ Id, Vgs	31 mOhm
Supplier Device Package	PG-TO252-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPD30N10S3L34ATMA1	31 mOhm	4.5 V 10 V	30 A	N-Channel	PG-TO252-3-11	100 V	20 V	MOSFET (Metal Oxide)	2.4 V	57 W	-55 °C	175 ░C	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	1976 pF	31 nC

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General part information

The IPD30N10S3L-34 is a N-channel enhancement-mode MOSFET with lowest switching and conduction power losses for highest thermal efficiency.