IXFR70N15

Obsolete

IXYS

MOSFET N-CH 150V 67A ISOPLUS247

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Obsolete

IXYS

MOSFET N-CH 150V 67A ISOPLUS247

Technical Specifications

Parameters and characteristics for this part

Specification	IXFR70N15

Current - Continuous Drain (Id) @ 25°C	67 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	180 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	ISOPLUS247™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs
IXYS IXFR70N15	67 A	20 V	3600 pF	250 W	4 V	28 mOhm	TO-247-3	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	150 V	ISOPLUS247™	10 V	Through Hole	180 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 67A (Tc) 250W (Tc) Through Hole ISOPLUS247™

Technical documentation and resources

No documents available