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STR2N2VH5 - SOT-23-3

STR2N2VH5

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STMicroelectronics

N-CHANNEL 20 V, 0.025 OHM TYP., 2.3 A STRIPFET H5 POWER MOSFET IN SOT-23 PACKAGE

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STR2N2VH5 - SOT-23-3

STR2N2VH5

Active
STMicroelectronics

N-CHANNEL 20 V, 0.025 OHM TYP., 2.3 A STRIPFET H5 POWER MOSFET IN SOT-23 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTR2N2VH5
Current - Continuous Drain (Id) @ 25°C2.3 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 2.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]4.6 nC
Input Capacitance (Ciss) (Max) @ Vds367 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]350 mW
Rds On (Max) @ Id, Vgs30 mOhm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id700 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.76
10$ 0.62
100$ 0.48
500$ 0.41
1000$ 0.41
Digi-Reel® 1$ 0.76
10$ 0.62
100$ 0.48
500$ 0.41
1000$ 0.41
Tape & Reel (TR) 3000$ 0.41

Description

General part information

STR2N2VH5 Series

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.