CSD16325Q5

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Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 2.2 MOHM

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Active

Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 2.2 MOHM

Technical Specifications

Parameters and characteristics for this part

Specification	CSD16325Q5

Current - Continuous Drain (Id) @ 25°C	100 A, 33 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	3 V, 8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3.1 W
Rds On (Max) @ Id, Vgs	2 mOhm
Supplier Device Package	8-VSON-CLIP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V, -8 V
Vgs(th) (Max) @ Id	1.4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type
Texas Instruments CSD16325Q5	1.4 V	25 V	2 mOhm	3 V, 8 V	-8 V, 10 V	33 A, 100 A	8-VSON-CLIP (5x6)	Surface Mount	MOSFET (Metal Oxide)	25 nC	8-PowerTDFN	150 °C	-55 °C	3.1 W	4000 pF	N-Channel

General part information

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.

Technical documentation and resources