JAN1N6630U

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Microsemi Corporation

DIODE GEN PURP 900V 1.4A D-5B

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Microsemi Corporation

DIODE GEN PURP 900V 1.4A D-5B

Technical Specifications

Parameters and characteristics for this part

Specification	JAN1N6630U

Current - Average Rectified (Io)	1.4 A
Current - Reverse Leakage @ Vr	2 µA
Grade	Military
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	E, SQ-MELF
Qualification	MIL-PRF-19500/590
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	D-5B
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	900 V
Voltage - Forward (Vf) (Max) @ If	1.4 V

Part	Speed	Supplier Device Package	Grade	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Qualification	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Package / Case	Current - Average Rectified (Io)	Technology
Microsemi Corporation JAN1N6630U	200 mA 500 ns	D-5B	Military	Surface Mount	1.4 V	MIL-PRF-19500/590	900 V	2 µA	150 °C	-65 C	50 ns	E SQ-MELF	1.4 A	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 16.63

General part information

Diode 900 V 1.4A Surface Mount D-5B

Technical documentation and resources

No documents available