Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TIP142T | TIP142 Series |
|---|---|---|
| - | - | |
| Current - Collector Cutoff (Max) | 2 mA | 2 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 1000 | 1000 |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature | 150 °C | 150 °C |
| Package / Case | TO-220-3 | TO-220-3 |
| Power - Max [Max] | 80 W | 80 W |
| Supplier Device Package | TO-220 | TO-220 |
| Vce Saturation (Max) @ Ib, Ic | 3 V | 3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
TIP142 Series
Low voltage NPN power Darlington transistor
| Part | Current - Collector Cutoff (Max) | Mounting Type | Power - Max [Max] | Vce Saturation (Max) @ Ib, Ic | Voltage - Collector Emitter Breakdown (Max) [Max] | Package / Case | Supplier Device Package | Operating Temperature | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] |
|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics TIP142 | |||||||||
STMicroelectronics TIP142T | |||||||||
STMicroelectronics TIP142 | |||||||||
STMicroelectronics TIP142T | 2 mA | Through Hole | 80 W | 3 V | 100 V | TO-220-3 | TO-220 | 150 °C | 1000 |
STMicroelectronics TIP142T | |||||||||
STMicroelectronics TIP142 |
Description
General part information
TIP142 Series
The devices are manufactured in planar technology with "base island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Documents
Technical documentation and resources