Technical Specifications
Parameters and characteristics for this part
| Specification | TIP142T |
|---|---|
| Current - Collector Cutoff (Max) | 2 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 1000 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 80 W |
| Supplier Device Package | TO-220 |
| Vce Saturation (Max) @ Ib, Ic | 3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
TIP142T Series
The devices are manufactured in planar technology with "base island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Documents
Technical documentation and resources