IXTH12N70X2

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IXYS

MOSFET N-CH 700V 12A TO247

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IXYS

MOSFET N-CH 700V 12A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH12N70X2

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	960 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	180 W
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Power Dissipation (Max) [Max]
IXYS IXTH12N120	10 V	TO-247-3	MOSFET (Metal Oxide)	1200 V	5 V	1.4 Ohm	TO-247 (IXTH)	12 A	Through Hole	500 W	30 V	3400 pF	95 nC	-55 °C	150 °C	N-Channel
IXYS IXTH12N90	10 V	TO-247-3	MOSFET (Metal Oxide)	900 V	4.5 V	900 mOhm	TO-247 (IXTH)	12 A	Through Hole		20 V	4500 pF	170 nC	-55 °C	150 °C	N-Channel	300 W
IXYS IXTH12N70X2	10 V	TO-247-3	MOSFET (Metal Oxide)	700 V	4.5 V		TO-247 (IXTH)	12 A	Through Hole	180 W	30 V	960 pF	19 nC	-55 °C	150 °C	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 3.63

General part information

N-Channel 700 V 12A (Tc) 180W (Tc) Through Hole TO-247 (IXTH)

Technical documentation and resources

No documents available