SS1F4HM3/H

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DIODE SCHOTTKY 40V 1A DO219AB

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DIODE SCHOTTKY 40V 1A DO219AB

Description

General part information

Diode 40 V 1A Surface Mount DO-219AB (SMF)

Parameters and characteristics for this part

Specification	SS1F4HM3/H

Capacitance	85 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage	150 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	175 °C
Package / Case	DO-219AB
Package Name	DO-219AB (SMF)
Qualification	AEC-Q101
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	40 V
Voltage - Forward (Vf) (Max)	520 mV

Part	Voltage - Forward (Vf) (Max)	Qualification	Current - Reverse Leakage	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Operating Temperature - Junction (Max)	Grade	Mounting Type	Current - Average Rectified (Io)	Capacitance	Package Name	Voltage - DC Reverse (Vr) (Max)	Technology	Package / Case
Vishay General Semiconductor - Diodes Division SS1F4HM3/I	520 mV	AEC-Q101	150 µA	500 ns	200 mA	175 °C	Automotive	Surface Mount	1 A	85 pF	DO-219AB (SMF)	40 V	Schottky	DO-219AB
Vishay General Semiconductor - Diodes Division SS1F4HM3/H	520 mV	AEC-Q101	150 µA	500 ns	200 mA	175 °C	Automotive	Surface Mount	1 A	85 pF	DO-219AB (SMF)	40 V	Schottky	DO-219AB

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