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DMT4011LSS-13 - 8-SOP

DMT4011LSS-13

Active
Diodes Inc

40V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMT4011LSS-13 - 8-SOP

DMT4011LSS-13

Active
Diodes Inc

40V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT4011LSS-13
Current - Continuous Drain (Id) @ 25°C10.8 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14.3 nC
Input Capacitance (Ciss) (Max) @ Vds829 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max) [Max]1.31 W
Rds On (Max) @ Id, Vgs11.5 mOhm
Supplier Device Package8-SOP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2500$ 0.18
5000$ 0.17
7500$ 0.16
12500$ 0.15
17500$ 0.15
25000$ 0.14

Description

General part information

DMT4011LFG Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.