STB50N65DM6

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STMicroelectronics

N-CHANNEL 650 V, 74 MOHM TYP., 33 A MDMESH DM6 POWER MOSFET IN A D2PAK PACKAGE

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STB50N65DM6

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STMicroelectronics

N-CHANNEL 650 V, 74 MOHM TYP., 33 A MDMESH DM6 POWER MOSFET IN A D2PAK PACKAGE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STB50N65DM6

Current - Continuous Drain (Id) @ 25°C	33 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	52.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	91 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4.75 V

STB50N65DM6 Series

N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a D2PAK package

Part	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STB50N65DM6	25 V	10 V	N-Channel	250 W	52.5 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	650 V	91 mOhm	MOSFET (Metal Oxide)	4.75 V	TO-263 (D2PAK)	-55 °C	150 °C	Surface Mount	2300 pF	33 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	1000	$ 4.09
		2000	$ 3.83

Description

General part information

STB50N65DM6 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

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Technical documentation and resources