AOTF8N80

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 800V 7.4A TO220-3F

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 800V 7.4A TO220-3F

Technical Specifications

Parameters and characteristics for this part

Specification	AOTF8N80

Current - Continuous Drain (Id) @ 25°C	7.4 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	1650 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	1.63 Ohm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
Alpha & Omega Semiconductor Inc. AOTF8N80	7.4 A	10 V	30 V	32 nC	N-Channel	1.63 Ohm	800 V	50 W	-55 °C	150 °C	TO-220F	MOSFET (Metal Oxide)	Through Hole	TO-220-3 Full Pack	4.5 V	1650 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 0.93