DMTH4008LPDWQ-13

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Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 46.2A I(D), 40V, 0.0123OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,

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DMTH4008LPDWQ-13

Active

Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 46.2A I(D), 40V, 0.0123OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMTH4008LPDWQ-13

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	10 A, 46.2 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	12.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	881 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max	39.4 W, 2.67 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	12.3 mOhm
Supplier Device Package	PowerDI5060-8 (Type UXD)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.3 V

DMTH4008LFDFWQ Series

40V +175°C N-Channel Enhancement Mode MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Supplier Device Package	Qualification	Grade	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Power - Max	Configuration	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
Diodes Inc DMTH4008LFDFWQ-13	4.5 V 10 V	3 V	Surface Mount	20 V	11.5 mOhm	40 V	14.2 nC	6-UDFN Exposed Pad	1030 pF	11.6 A	990 mW	U-DFN2020-6 (SWP) (Type F)	AEC-Q101	Automotive	N-Channel	-55 °C	175 ░C	MOSFET (Metal Oxide)
Diodes Inc DMTH4008LPDWQ-13		2.3 V	Surface Mount		12.3 mOhm	40 V		8-PowerTDFN	881 pF	10 A 46.2 A		PowerDI5060-8 (Type UXD)	AEC-Q101	Automotive		-55 °C	175 ░C	MOSFET (Metal Oxide)	2.67 W 39.4 W	2 N-Channel (Dual)	12.3 nC
Diodes Inc DMTH4008LPSQ-13		3 V	Surface Mount	20 V	8.8 mOhm	40 V		8-PowerTDFN	1088 pF	14.4 A 64.8 A	2.99 W 55.5 W	PowerDI5060-8	AEC-Q101	Automotive	N-Channel	-55 °C	175 ░C	MOSFET (Metal Oxide)			15.3 nC	10 V	5 V
Diodes Inc DMTH4008LPS-13		3 V	Surface Mount	20 V	8.8 mOhm	40 V		8-PowerTDFN	1088 pF	14.4 A 64.8 A	2.99 W 55.5 W	PowerDI5060-8	AEC-Q101	Automotive	N-Channel	-55 °C	175 ░C	MOSFET (Metal Oxide)			15.3 nC	10 V	5 V
Diodes Inc DMTH4008LFDFW-13	4.5 V 10 V	3 V	Surface Mount	20 V	11.5 mOhm	40 V	14.2 nC	6-UDFN Exposed Pad	1030 pF	11.6 A	990 mW	U-DFN2020-6 (SWP) (Type F)	AEC-Q101	Automotive	N-Channel	-55 °C	175 ░C	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.82
		10	$ 0.71
		100	$ 0.49
		500	$ 0.41
		1000	$ 0.35
	Digi-Reel®	1	$ 0.82
		10	$ 0.71
		100	$ 0.49
		500	$ 0.41
		1000	$ 0.35
	Tape & Reel (TR)	2500	$ 0.31
		5000	$ 0.30
		12500	$ 0.28

Description

General part information

DMTH4008LFDFWQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: brushless DC motor controls, DC-DC converters, and load switches.