SIDC32D170HX1SA3

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Infineon Technologies

1700 V, 50 A, EMITTER CONTROLLED DIODE 3

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SIDC32D170HX1SA3

Unknown

Infineon Technologies

1700 V, 50 A, EMITTER CONTROLLED DIODE 3

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SIDC32D170HX1SA3

Current - Average Rectified (Io)	50 A
Current - Reverse Leakage @ Vr	27 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Die
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Sawn on foil
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1700 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

SIDC32D Series

Part	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Technology	Speed	Speed	Current - Average Rectified (Io)
Infineon Technologies SIDC32D170HX1SA3	Surface Mount	150 °C	-55 °C	Sawn on foil	27 µA	1700 V	1.8 V	Die	Standard	Standard Recovery >500ns	200 mA	50 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

SIDC32D Series

Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.

Documents

Technical documentation and resources

No documents available