AIMBG120R060M1XTMA1

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Infineon Technologies

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 38 A, 1.2 KV, 0.075 OHM, TO-263HV

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AIMBG120R060M1XTMA1

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Infineon Technologies

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 38 A, 1.2 KV, 0.075 OHM, TO-263HV

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	AIMBG120R060M1XTMA1

Current - Continuous Drain (Id) @ 25°C	38 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	20 V, 18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	32 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	880 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max)	202 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	PG-TO263-7-12
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max) [Max]	23 V
Vgs (Max) [Min]	-5 V
Vgs(th) (Max) @ Id	5.1 V

AIMBG120 Series

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Vgs (Max) [Max]	Vgs (Max) [Min]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Grade	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
Infineon Technologies AIMBG120R120M1XTMA1
Infineon Technologies AIMBG120R010M1XTMA1	N-Channel	187 A	1200 V	Surface Mount	-55 °C	347 °F	PG-TO263-7-12	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA
Infineon Technologies AIMBG120R060M1XTMA1	N-Channel	38 A	1200 V	Surface Mount	-55 °C	175 ░C	PG-TO263-7-12	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	23 V	-5 V	5.1 V	32 nC	AEC-Q101	Automotive	202 W	SiC (Silicon Carbide Junction Transistor)	18 V 20 V	75 mOhm	880 pF
Infineon Technologies AIMBG120R160M1XTMA1	N-Channel	17 A	1200 V	Surface Mount	-55 °C	175 ░C	PG-TO263-7-12	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	23 V	-5 V	5.1 V	14 nC	AEC-Q101	Automotive	106 W	SiC (Silicon Carbide Junction Transistor)	18 V 20 V	200 mOhm	350 pF
Infineon Technologies AIMBG120R020M1XTMA1	N-Channel	104 A	1200 V	Surface Mount	-55 °C	175 ░C	PG-TO263-7-12	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	23 V	-5 V	5.1 V		AEC-Q101	Automotive		SiC (Silicon Carbide Junction Transistor)	18 V 20 V	25 mOhm	2667 pF	82 nC	468 W
Infineon Technologies AIMBG120R080M1XTMA1	N-Channel	30 A	1200 V	Surface Mount	-55 °C	347 °F	PG-TO263-7-12	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA
Infineon Technologies AIMBG120R030M1XTMA1	N-Channel	70 A	1200 V	Surface Mount	-55 °C	175 ░C	PG-TO263-7-12	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	23 V	-5 V	5.1 V		AEC-Q101	Automotive	333 W	SiC (Silicon Carbide Junction Transistor)	18 V 20 V	38 mOhm	1738 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 15.73
		10	$ 11.11
		100	$ 8.49
		500	$ 8.23
	Digi-Reel®	1	$ 15.73
		10	$ 11.11
		100	$ 8.49
		500	$ 8.23
	Tape & Reel (TR)	1000	$ 8.23
Newark	Each (Supplied on Cut Tape)	1	$ 11.70
		10	$ 8.51
		25	$ 8.33
		50	$ 8.15
		100	$ 7.98
		250	$ 7.81
		500	$ 7.80
		1000	$ 7.65

Description

General part information

AIMBG120 Series

With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.

Documents

Technical documentation and resources