IXTA90N055T

Obsolete

IXYS

MOSFET N-CH 55V 90A TO263

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Obsolete

IXYS

MOSFET N-CH 55V 90A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA90N055T

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	61 nC
Input Capacitance (Ciss) (Max) @ Vds	2500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	176 W
Rds On (Max) @ Id, Vgs	8.8 mOhm
Supplier Device Package	TO-263AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type
IXYS IXTA90N075T2	10 V	-55 °C	175 ░C	N-Channel	MOSFET (Metal Oxide)	90 A	TO-263AA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3290 pF	20 V	75 V	4 V	180 W	10 mOhm	54 nC	Surface Mount
IXYS IXTA90N055T	10 V	-55 °C	175 ░C	N-Channel	MOSFET (Metal Oxide)	90 A	TO-263AA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2500 pF	20 V	55 V	4 V	176 W	8.8 mOhm	61 nC	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 90A (Tc) 176W (Tc) Surface Mount TO-263AA

Technical documentation and resources

No documents available