JAN2N6051

Unknown

Microchip Technology

POWER BJT TO-3 ROHS COMPLIANT: YES

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JAN2N6051

Unknown

Microchip Technology

POWER BJT TO-3 ROHS COMPLIANT: YES

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Description Specifications Series Pricing CAD Documents

Description

General part information

JAN2N6051-Transistor Series

This family of 2N6051 and 2N6502 high speed PNP transistors are rated at 12 amps and are military qualified up to a JAN level for high-reliability applications. These transistors are available in TO-204AA (TO-3) isolated package with 180 degree lead orientation.

Technical Specifications

Parameters and characteristics for this part

Specification	JAN2N6051

Current - Collector (Ic) (Max)	12 A
Current - Collector Cutoff (Max)	1 mA
DC Current Gain (hFE) (Min)	1000
Grade	Military
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-3
Package Name	TO-3 (TO-204AA)
Power - Max	150 W
Qualification	501, MIL-PRF-19500
Transistor Type	PNP, Darlington
Vce Saturation (Max)	3 V
Voltage - Collector Emitter Breakdown (Max)	80 V

JAN2N6051-Transistor Series

MIL-PRF-19500/501

Part	Voltage - Collector Emitter Breakdown (Max)	Power - Max	DC Current Gain (hFE) (Min)	Package / Case	Package Name	Current - Collector (Ic) (Max)	Vce Saturation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Qualification	Grade	Mounting Type	Transistor Type	Current - Collector Cutoff (Max)
Microchip Technology JAN2N6051	80 V	150 W	1000	TO-3	TO-3 (TO-204AA)	12 A	3 V	-55 °C	175 °C	501 MIL-PRF-19500	Military	Through Hole	Darlington PNP	1 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Product Change Notice EN

2N6051 and 2N6052