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FM16W08-SGTR - INFINEON FM28V020-SGTR

FM16W08-SGTR

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Infineon Technologies

FERROELECTRIC RAM (FRAM), 64 KBIT, 8K X 8BIT, PARALLEL, 2.7 V TO 5.5 V SUPPLY, SOIC-28

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FM16W08-SGTR - INFINEON FM28V020-SGTR

FM16W08-SGTR

Active
Infineon Technologies

FERROELECTRIC RAM (FRAM), 64 KBIT, 8K X 8BIT, PARALLEL, 2.7 V TO 5.5 V SUPPLY, SOIC-28

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFM16W08-SGTR
Memory FormatFRAM
Memory InterfaceParallel
Memory Organization8 K
Memory Size64 Kbit
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case28-SOIC
Package / Case [x]0.295 in
Package / Case [y]7.5 mm
Supplier Device Package28-SOIC
TechnologyFRAM (Ferroelectric RAM)
Voltage - Supply [Max]5.5 V
Voltage - Supply [Min]2.7 V
Write Cycle Time - Word, Page130 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.26
10$ 5.71
25$ 5.60
50$ 5.56
100$ 4.99
250$ 4.97
500$ 4.66
Digi-Reel® 1$ 6.26
10$ 5.71
25$ 5.60
50$ 5.56
100$ 4.99
250$ 4.97
500$ 4.66
Tape & Reel (TR) 1000$ 4.46
2000$ 4.32
NewarkEach (Supplied on Cut Tape) 1$ 6.02
10$ 5.61
25$ 5.44
50$ 5.31
100$ 5.18
250$ 5.01
500$ 4.89

Description

General part information

FM16W08 Series

FM16W08-SGTR is a FM16W08 8 K × 8 nonvolatile wide voltage Bytewide F-RAM memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. Its operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Minimum read and write cycle times are equal. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. This features make the FM16W08 ideal for nonvolatile memory applications requiring frequent or rapid writes.

Documents

Technical documentation and resources