AUIRF4905S

Obsolete

Infineon Technologies

MOSFET P-CH 55V 42A D2PAK

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Obsolete

Infineon Technologies

MOSFET P-CH 55V 42A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRF4905S

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	180 nC
Input Capacitance (Ciss) (Max) @ Vds	3500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Technology	Vgs (Max)	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package
Infineon Technologies AUIRF4905STRL	4 V	-55 °C	150 °C	Automotive	55 V	20 mOhm	180 nC	200 W	10 V	P-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	20 V	AEC-Q101	3500 pF	42 A	Surface Mount
Infineon Technologies AUIRF4905S	4 V	-55 °C	150 °C		55 V	20 mOhm	180 nC	200 W	10 V	P-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	20 V		3500 pF	42 A	Surface Mount	D2PAK

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 55 V 42A (Tc) 200W (Tc) Surface Mount D2PAK

Technical documentation and resources