Technical Specifications
Parameters and characteristics for this part
| Specification | STB13007DT4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 8 A |
| Current - Collector Cutoff (Max) [Max] | 100 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 hFE |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power - Max [Max] | 80 W |
| Supplier Device Package | D2PAK |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 3 V |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STB13007DT4 Series
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure to enhance switching speeds.