IXGR55N120A3H1

Active

IXYS

TRANSISTOR: IGBT; GENX3™; 1.2KV; 30A; 200W; PLUS247™

Search across all available documentation for this part.

Active

IXYS

TRANSISTOR: IGBT; GENX3™; 1.2KV; 30A; 200W; PLUS247™

Technical Specifications

Parameters and characteristics for this part

Specification	IXGR55N120A3H1

Current - Collector (Ic) (Max) [Max]	70 A
Current - Collector Pulsed (Icm)	330 A
Gate Charge	185 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	200 W
Reverse Recovery Time (trr)	200 ns
Supplier Device Package	ISOPLUS247™
Switching Energy	5.1 mJ, 13.3 mJ
Td (on/off) @ 25°C	23 ns
Td (on/off) @ 25°C	365 ns
Test Condition	960 V, 3 Ohm, 15 V, 55 A
Vce(on) (Max) @ Vge, Ic	2.35 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Package / Case	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	IGBT Type	Gate Charge	Switching Energy	Test Condition	Vce(on) (Max) @ Vge, Ic	Mounting Type	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]
IXYS IXGR55N120A3H1	23 ns	365 ns	-55 °C	150 °C	200 W	TO-247-3	330 A	70 A	200 ns	PT	185 nC	5.1 mJ 13.3 mJ	3 Ohm 15 V 55 A 960 V	2.35 V	Through Hole	ISOPLUS247™	1200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT PT 1200 V 70 A 200 W Through Hole ISOPLUS247™

Technical documentation and resources

No documents available