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IXTP15P15T

IXTP15P15T

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LITTELFUSE

DISCMSFT PCHAN-TRENCH GATE TO-220AB/FP/ TUBE

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IXTP15P15T

IXTP15P15T

Active
LITTELFUSE

DISCMSFT PCHAN-TRENCH GATE TO-220AB/FP/ TUBE

Find alt

Description

General part information

IXTP15 Series

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTP15P15T
Current - Continuous Drain (Id) (Tc)15 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)48 nC, 48 nC
Input Capacitance (Ciss) (Max)3650 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220-3
Power Dissipation (Max)150 W
Rds On (Max)240 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)15 V
Vgs(th) (Max)4.5 V

Pricing

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