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IXTH140P05T

IXTH140P05T

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LITTELFUSE

DISCMSFT PCHAN-TRENCH GATE TO-247AD/ TUBE

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IXTH140P05T

IXTH140P05T

Active
LITTELFUSE

DISCMSFT PCHAN-TRENCH GATE TO-247AD/ TUBE

Find alt

Description

General part information

IXTH140 Series

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTH140P05T
Current - Continuous Drain (Id) (Tc)140 A
Drain to Source Voltage (Vdss)50 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)200 nC
Input Capacitance (Ciss) (Max)13500 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-3
Package NameTO-247 (IXTH)
Power Dissipation (Max)298 W
Rds On (Max)9 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)15 V
Vgs(th) (Max)4 V

Pricing

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