IDW12G65C5FKSA1

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Infineon Technologies

DIODE SIL CARB 650V 12A TO247-3

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Unknown

Infineon Technologies

DIODE SIL CARB 650V 12A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IDW12G65C5FKSA1

Capacitance @ Vr, F	360 pF
Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO247-3-41
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V

Part	Mounting Type	Technology	Reverse Recovery Time (trr)	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Speed	Package / Case
Infineon Technologies IDW12G65C5FKSA1	Through Hole	SiC (Silicon Carbide) Schottky	0 ns	PG-TO247-3-41	500 µA	650 V	360 pF	175 ░C	-55 C	12 A	No Recovery Time	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 650 V 12A Through Hole PG-TO247-3-41

Technical documentation and resources