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PSMN5R3-25MLDX

PSMN5R3-25MLDX

Active
Nexperia USA Inc.

N-CHANNEL 25 V, 5.3 MΩ LOGIC LEVEL MOSFET IN LFPAK33 USING NEXTPOWERS3 TECHNOLOGY

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PSMN5R3-25MLDX

PSMN5R3-25MLDX

Active
Nexperia USA Inc.

N-CHANNEL 25 V, 5.3 MΩ LOGIC LEVEL MOSFET IN LFPAK33 USING NEXTPOWERS3 TECHNOLOGY

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Description

General part information

PSMN5R3-25MLD Series

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN5R3-25MLDX
Current - Continuous Drain (Id) (Tc)70 A
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET FeatureSchottky Diode (Body)
FET TypeN-Channel
Gate Charge (Max)12.7 nC
Input Capacitance (Ciss) (Max)858 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-LFPAK33 (5-Lead), SOT-1210
Package NameLFPAK33
Power Dissipation (Max)51 W
Rds On (Max)5.9 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.2 V

Pricing

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CAD

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